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808822

Tungsten diselenide

Crystal, 99.995%

Synonym(s):

Tungsten (IV) selenide, Tungsten selenide

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About This Item

Linear Formula:
WSe2
CAS Number:
12067-46-8
Molecular Weight:
341.76
NACRES:
NA.23
PubChem Substance ID:
329769125
UNSPSC Code:
26111700
MDL number:
MFCD00049703
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Quality Level

100

description

Electrical properties: Semiconductor, p-type

assay

99.995%

form

crystals

reaction suitability

core: tungsten

L × W × H

0.5 cm × 0.5 cm × 0.1-0.15 mm, typical size, some variation in dimensions may occur with different batches

primary crystallite size

~10 mm (hexagonal)

SMILES string

[Se]=[W]=[Se]

InChI

1S/2Se.W

InChI key

ROUIDRHELGULJS-UHFFFAOYSA-N

Application

The two dimensional layered inorganic nanomaterials have drawn significant attention recently owing to their thickness dependent physical and chemical properties. They find applications in photocatalysis, phtotovoltaics, gas sensing, lithium ion batteries, field effect transistors, spintronics etc. Transition metal dischalcogenides represent an important class of inorganic 2D materials having the aforementioned applications.

Preparation Note

Store under nitrogen atmosphere.

signalword

Danger

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 2

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

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Articles

Recent Advances in Scalable Synthesis and Processing of Two-Dimensional Materials

Advances in scalable synthesis and processing of two-dimensional materials

2D Materials in Biosensing

Professors summarize recent 2D materials synthesis advancements and biosensing applications in various fields.

Recent Advances in Perovskite Solar Cells

Research focuses on sustainable and cost-effective power generation systems to meet the growing demand for environmentally friendly energy sources.

Zilong Wu et al.
Advanced materials (Deerfield Beach, Fla.), 31(49), e1904132-e1904132 (2019-10-18)
Spin-dependent contrasting phenomena at K and K' valleys in monolayer semiconductors have led to addressable valley degree of freedom, which is the cornerstone for emerging valleytronic applications in information storage and processing. Tunable and active modulation of valley dynamics in
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Nanocomposite strain sensors, particularly those consisting of polymer-graphene composites, are increasingly common and are of great interest in the area of wearable sensors. In such sensors, application of strain yields an increase in resistance due to the effect of deformation
Exploration of Nanostructured Functional Materials Based on Hybridization of Inorganic 2D Nanosheets.
Gunjakar JL, et al.
The Journal of Physical Chemistry C, 118, 3847-3863 (2014)
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Global Trade Item Number

SKUGTIN
808822-1EA04061832995595