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647101

Silicon

greener alternative

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
Technical Service
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Quality Level

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

does not contain

dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

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diam. × thickness

2 in. × 0.5 mm

matrix

Silicon base material

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

semiconductor properties

<111>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Application


  • Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).

  • Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).



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wgk

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Storage Class

11 - Combustible Solids



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Protocols

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Articles

Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.

Explore methods for molecular monolayers on silicon surfaces, their properties, and applications in molecular electronics and sensing.

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image



Global Trade Item Number

SKUGTIN
647101-5EA04061832730677
647101-1EA04061832730660