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203815

Molybdenum(VI) oxide

99.97% trace metals basis

Synonym(s):

Molybdena, Molybdic anhydride, Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
1313-27-5
Molecular Weight:
143.94
PubChem Substance ID:
24852067
eCl@ss:
38180807
UNSPSC Code:
12352303
NACRES:
NA.23
EC Number:
215-204-7
MDL number:
MFCD00003469
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assay

99.97% trace metals basis

form

powder

composition

MoO₃

reaction suitability

core: molybdenum

mp

795 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

General description

Molybdenum(VI) oxide, also known as molybdenum trioxide, is a compound of molybdenum and oxygen with the approximate chemical formula of MoO3. Typically, it a white or light yellow powder, although molybdenum(VI) oxide can adopt a high concentration of defects including oxygen vacancies that impart a bluish or greenish color. Molybdenum(VI) oxide has a high melting point of 2,620 °C. Chemically, molybdenum(VI) oxide is a strong oxidizing agent and has a high work function. Consequently, it is used as a catalyst in chemical reactions and as a starting material to produce other molybdenum compounds. In addition, it is added to pigments, glasses, lubricants, and plastics.

Application

Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13and Mo19 clusters. The new cluster product is a small band gap semiconductor.

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pictograms

Health hazardExclamation mark
GHS08,GHS07

signalword

Warning

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

11 - Combustible Solids

wgk

WGK 1

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Faceshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
09623KH
04006DH
08826JE
02720PW
11009CE

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Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
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Global Trade Item Number

SKUGTIN
203815-5G04061838766366
203815-25G04061838766359