795712
Molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene)
Synonym(s):
Mo(tfd)3
form
solid
SMILES string
FC(F)(F)C(S1)=C(C(F)(F)F)S[Mo]213(SC(C(F)(F)F)=C(C(F)(F)F)S3)SC(C(F)(F)F)=C(C(F)(F)F)S2
InChI
1S/3C4H2F6S2.Mo/c3*5-3(6,7)1(11)2(12)4(8,9)10;/h3*11-12H;/q;;;+6/p-6/b3*2-1-;
InChI key
KPELOYUGUICPOT-JVUUZWNBSA-H
General description
The p dopant Mo(tfd)3 has high electron affinity (EA= 5.6 eV).The efficiency of Mo(tfd)3 as a dopant has been studied extensively by ultraviolet and X ray photoelectron spectroscopy, Rutherford backscattering, etc.
Application
Molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd)3) may be used to p dope the hole transporting layer of HTM N,N′-di[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′- diamine.
It may be used as a dopant to reduced contact resistance in pentacene based organic field effect transistors (OFETs).
It may be used as a dopant to reduced contact resistance in pentacene based organic field effect transistors (OFETs).
Biochem/physiol Actions
p-dopant
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation.
Qi Y, et al.
Chemistry of Materials null
Pentacene organic field-effect transistors with doped electrode-semiconductor contacts
Tiwari, S. P.;
Organic Electronics, 11, 860-860 (2010)
Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
Zhao W, et al.
Applied Physics Letters, 12 null
A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation.
Qi Y, et al.
Chemistry of Materials, 524-531 null
Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
Zhao W, et al.
Applied Physics Letters null
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