730734
Trimethylgallium
packaged for use in deposition systems
동의어(들):
Me3Ga, TMGa, TMG
로그인조직 및 계약 가격 보기
크기 선택
제품정보 (DICE 배송 시 비용 별도)
Linear Formula:
Ga(CH3)3
CAS 번호:
Molecular Weight:
114.83
EC Number:
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23
Quality Level
양식
liquid
반응 적합성
core: gallium
bp
92.5 °C/760 mmHg (lit.)
mp
-15.8 °C (lit.)
density
1.132 g/mL at 25 °C
SMILES string
C[Ga](C)C
InChI
1S/3CH3.Ga/h3*1H3;
InChI key
XCZXGTMEAKBVPV-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
일반 설명
Trimethylgallium (TMGa) [Ga(CH3)3] is a high-purity (99.9999%), colorless, and pyrophoric organometallic compound widely used as a key precursor in metal-organic chemical vapor deposition (MOCVD) for semiconductor manufacturing. Its high volatility and metal-organic reactivity make it essential for producing gallium-containing thin films in optoelectronics, photovoltaics, and high-frequency devices. TMGa′s ultra-low impurity levels ensure performance consistency in applications such as LEDs, laser diodes, and high-electron-mobility transistors (HEMTs). Recent advancements have also extended its role to quantum dot synthesis and photonic integrated circuits for energy-efficient and IoT-enabled technologies.
애플리케이션
Trimethylgallium can be used as:
- A precursor to synthesize β-gallium oxide (β-Ga₂O₃) thin films for high-power electronic devices, offering superior breakdown voltage and thermal stability.
- A precursor for epitaxial growth of gallium nitride (GaN) in blue LEDs and laser diodes, enabling high-brightness displays and optical communication systems.
- A component in colloidal quantum dot synthesis for tunable near-infrared LEDs in biomedical imaging and telecommunications.
- A source material for gallium arsenide (GaAs) layers in high-electron-mobility transistors (HEMTs), critical for 5G millimeter-wave amplifiers.
신호어
Danger
유해 및 위험 성명서
Hazard Classifications
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react 1
보충제 위험성
Storage Class Code
4.2 - Pyrophoric and self-heating hazardous materials
WGK
WGK 3
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