339113
Tantalum(V) ethoxide
99.98% trace metals basis
동의어(들):
Pentaethoxytantalum, Pentaethyl tantalate, Tantalum ethylate, Tantalum pentaethoxide, Tantalum(V) ethoxide
로그인조직 및 계약 가격 보기
크기 선택
제품정보 (DICE 배송 시 비용 별도)
Linear Formula:
Ta(OC2H5)5
CAS 번호:
Molecular Weight:
406.25
Beilstein:
3678999
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23
Quality Level
분석
99.98% trace metals basis
양식
liquid
반응 적합성
core: tantalum
reagent type: catalyst
불순물
<2 wt. % toluene
refractive index
n20/D 1.487 (lit.)
bp
155 °C/0.01 mmHg (lit.)
mp
21 °C (lit.)
density
1.566 g/mL at 25 °C (lit.)
SMILES string
CCO[Ta](OCC)(OCC)(OCC)OCC
InChI
1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5
InChI key
HSXKFDGTKKAEHL-UHFFFAOYSA-N
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일반 설명
Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our  99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of  tantalum oxide by chemical vapor deposition (CVD).
애플리케이션
Tantalum ethoxide is used as a precursor    
- To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of Ta₂O₅ thin films with tunable optical properties.
- In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
- To synthesize hollow TaOx nanoshells in the formation of Bi₂S₃@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.
특징 및 장점
- 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
- Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.
신호어
Warning
유해 및 위험 성명서
Hazard Classifications
Flam. Liq. 3
Storage Class Code
3 - Flammable liquids
WGK
WGK 1
Flash Point (°F)
84.2 °F - closed cup
Flash Point (°C)
29 °C - closed cup
개인 보호 장비
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
The Electrosynthesis of Tantalum Ethoxide
Yang H, et al. 
Electrochemistry, 82(9), 743-748 (2014)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al. 
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al. 
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al. 
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Zsolt Cselényi et al.
Journal of cerebral blood flow and metabolism : official journal of the International Society of Cerebral Blood Flow and Metabolism, 35(9), 1485-1493 (2015-04-16)
Longitudinal positron emission tomography (PET) imaging of beta-amyloid is used in basic research and in drug efficacy trials in Alzheimer's disease (AD). However, the extent of amyloid accumulation after clinical onset is not fully known. Importantly, regional PET data are
문서
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
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