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Merck

339113

Sigma-Aldrich

Tantalum(V) ethoxide

99.98% trace metals basis

동의어(들):

Pentaethoxytantalum, Pentaethyl tantalate, Tantalum ethylate, Tantalum pentaethoxide, Tantalum(V) ethoxide

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크기 선택


제품정보 (DICE 배송 시 비용 별도)

Linear Formula:
Ta(OC2H5)5
CAS 번호:
Molecular Weight:
406.25
Beilstein:
3678999
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23
기술 서비스
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Quality Level

분석

99.98% trace metals basis

양식

liquid

반응 적합성

core: tantalum
reagent type: catalyst

불순물

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

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일반 설명

Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of  tantalum oxide by chemical vapor deposition (CVD).

애플리케이션

Tantalum ethoxide is used as a precursor
  • To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of TaO thin films with tunable optical properties.
  • In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
  • To synthesize hollow TaOx nanoshells in the formation of BiS@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.

특징 및 장점

  • 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
  • Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.

픽토그램

Flame

신호어

Warning

유해 및 위험 성명서

Hazard Classifications

Flam. Liq. 3

Storage Class Code

3 - Flammable liquids

WGK

WGK 1

Flash Point (°F)

84.2 °F - closed cup

Flash Point (°C)

29 °C - closed cup

개인 보호 장비

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter


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문서 라이브러리에서 최근에 구매한 제품에 대한 문서를 찾아보세요.

문서 라이브러리 방문

The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Zsolt Cselényi et al.
Journal of cerebral blood flow and metabolism : official journal of the International Society of Cerebral Blood Flow and Metabolism, 35(9), 1485-1493 (2015-04-16)
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문서

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