204951
Zinc oxide
99.999% trace metals basis
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A propos de cet article
Formule linéaire :
ZnO
Numéro CAS:
Poids moléculaire :
81.39
PubChem Substance ID:
eCl@ss:
38150402
UNSPSC Code:
12352303
NACRES:
NA.23
EC Number:
215-222-5
MDL number:
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99.999% trace metals basis
form
powder
reaction suitability
core: zinc
SMILES string
O=[Zn]
InChI
1S/O.Zn
InChI key
XLOMVQKBTHCTTD-UHFFFAOYSA-N
General description
ZnO is a semiconductor with a wide band gap. Point defects in the structure define the electrical conductivity of the oxide. Doping these point defects with Al, In and Ga gives in a highly conductive n –type zinc oxide. Defect free ZnO can also be achieved by annealing the oxide in reducing environment. It also exhibits excellent optical transmission properties. Doped ZnO can form transparent conductors which may be useful in various energy-based applications.1
Application
Employed in the preparation of NaZnSiO3OH, a novel chiral framework material which has potential application in ion exchange, adsorption or catalysis.
Zinc oxide was added to the diet of piglets to enhance their growth performance and health.
signalword
Warning
hcodes
pcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1
Classe de stockage
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves
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Protocoles
Selenium's roles range from essential dietary element to semiconductor in advanced applications like xerography.
Articles
An article concerning self-propagating reactions induced by mechanical alloying, presented by Sigma-Aldrich.com.
The Zinc Concentration in the Diet and the Length of the Feeding Period Affect the Methylation Status of the ZIP4 Zinc Transporter Gene in Piglets
Karweina D, et al.
PLoS ONE, 10(11), e0143098-e0143098 (2015)
A. M. Healey et al.
Inorganic chemistry, 38(3), 455-458 (2001-10-25)
The structure of NaZnSiO(3)OH, synthesized hydrothermally by reaction of Na(2)ZnSiO(4) and NaOH, has been determined from single-crystal X-ray and powder neutron diffraction data (orthorhombic, space group P2(1)2(1)2(1,) a = 7.6872(2) Å, b = 9.3899(2) Å, c = 5.155(1) Å, Z
Kwang Gug Yim et al.
Journal of nanoscience and nanotechnology, 13(5), 3586-3590 (2013-07-19)
ZnO nanostructures were grown on Si (111) substrates by a hydrothermal method. Prior to growing the ZnO nanostructures, ZnO seed layers with different post-heat temperatures were prepared by a spin-coating process. Then, the ZnO nanostructures were annealed at 500 degrees
Numéro d'article de commerce international
| Référence | GTIN |
|---|---|
| 204951-125G | 04061838767370 |
| 204951-25G | 04061838767387 |